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KMID : 0372919970180030307
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Journal of Biomedical Engineering Research
1997 Volume.18 No. 3 p.307 ~ p.313
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Lee Hyeong-Gu
Sin Gyeong-Seop
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Abstract
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he photoconductive gain mechanism in amorphus silicon devices was investigated in connection with applications to radiation detection. Various device types such as p-i-n, n-i-n and i-i-p-i-n structures were fabricated and tested. Photoconductive gain was measured in two time scales : one for short pulses of visible light(<) which simulate the transit of energetic charged particles or -rays, and the other for rather long pulses of light(1msec) which simulate x-ray exposure in medical imaging, We used two definitions of phtoconductive gain : current gain and charge gain which is an integration of the current gain. We obtained typical charge gains of 3~9 for short pulses and a few hundreds for long pulses at a dark current density level of 10mA/. Various gain results are discussed in terms of the device structure, applied bias and dark current density.
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KEYWORD
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Photoconductive gain, Photocurrent, Photoconductivity, a-Si:H, p-i-n, n-i-n, n-i-p-i-n
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